The power conversion efficiency of visible light emitting devices in standard BiCMOS processes

We present experimental and theoretical proof for a single and unique relationship between the breakdown voltage and power efficiency of visible light emitting devices fabricated in standard BiCMOS processes.

Saved in:
Bibliographic Details
Published in2008 5th IEEE International Conference on Group IV Photonics pp. 256 - 258
Main Authors Kuindersma, P.I., Hoang, T., Schmitz, J., Vijayaraghavan, M.N., Dijkstra, M., van Noort, W., Vanhoucke, T., Peters, W.C.M., Kramer, M.C.J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2008
Subjects
Optical imaging
Optical receivers
Optical sensors
Optical variables measurement
Power conversion
Silicon
Stimulated emission
Online AccessGet full text

Cover

More Information
Summary:We present experimental and theoretical proof for a single and unique relationship between the breakdown voltage and power efficiency of visible light emitting devices fabricated in standard BiCMOS processes.
ISBN:9781424417698
1424417694
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2008.4638164