A 475-511GHz radiating source with SIW-based harmonic power extractor in 40 nm CMOS

This paper presents a 0.49 terahertz (THz) radiating source in 40 nm CMOS. The radiating source is composed of a cross-coupled oscillator, a differential tripler, a substrate integrated waveguide (SIW) based harmonic power extractor (HPE) and a folded dipole antenna. The HPE can optimize third harmo...

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Bibliographic Details
Published in2017 IEEE MTT-S International Microwave Symposium (IMS) pp. 95 - 98
Main Authors Kaizhe Guo, Reynaert, Patrick
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2017
Subjects
Antenna measurements
CMOS
Frequency measurement
Harmonic analysis
Power generation
Power harmonic filters
substrate integrated waveguide (SIW)
terahertz radiation
Tuning
voltage-controlled oscillator(VCO)
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Summary:This paper presents a 0.49 terahertz (THz) radiating source in 40 nm CMOS. The radiating source is composed of a cross-coupled oscillator, a differential tripler, a substrate integrated waveguide (SIW) based harmonic power extractor (HPE) and a folded dipole antenna. The HPE can optimize third harmonic power extraction and provide suppression of unwanted lower order harmonic leakage. The measured equivalent isotropically radiated power (EIRP) of the radiating source is -4.1 dBm. According to simulated antenna gain of 11.2 dB, the output power and DC-to-THz efficiency of the signal source can be calculated as -15.3 dBm and 0.173%, respectively. The output frequency can be tuned from 475 to 511 GHz within 10 dB EIRP variation.
DOI:10.1109/MWSYM.2017.8058748