Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system
High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integra...
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Published in | 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 256 - 259 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2018
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Subjects | |
Online Access | Get full text |
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Summary: | High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge module, with embedded decoupling capacitors and a high performance integrated thermal management system. |
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ISSN: | 1946-0201 |
DOI: | 10.1109/ISPSD.2018.8393651 |