Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system

High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integra...

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Bibliographic Details
Published in2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 256 - 259
Main Authors Mouawad, Bassem, Skuriat, Robert, Li, Jianfeng, Johnson, C. Mark, DiMarino, Christina
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2018
Subjects
Cooling
direct jet impingement
high density
high voltage
MOSFET
Multichip modules
packaging
power module
SiC MOSFET
Silicon carbide
Substrates
Temperature measurement
Thermal resistance
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Summary:High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge module, with embedded decoupling capacitors and a high performance integrated thermal management system.
ISSN:1946-0201
DOI:10.1109/ISPSD.2018.8393651