Incorporation Behaviors of Group V Elements in GaAsSbN Grown by Gas Source Molecular Beam Epitaxy

We report the incorporation behaviors of Sb and N in GaAsSbN epilayers grown by gas source molecular beam epitaxy. Our study reveals that N incorporation is independent of the growth temperature and the Sb flux. Lattice-matched GaAsSbN layers show lower energy gaps than those of InGaAsN reported in...

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Published in2007 IEEE 19th International Conference on Indium Phosphide & Related Materials pp. 350 - 353
Main Authors Ta-Chun Ma, Yan-Ting Lin, Tsung-Yi Chen, Li-Chang Chou, Hao-Hsiung Lin
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2007
Subjects
Gallium arsenide
Indium phosphide
Molecular beam epitaxial growth
Nitrogen
Plasma sources
Plasma temperature
Radio frequency
Substrates
Tellurium
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Summary:We report the incorporation behaviors of Sb and N in GaAsSbN epilayers grown by gas source molecular beam epitaxy. Our study reveals that N incorporation is independent of the growth temperature and the Sb flux. Lattice-matched GaAsSbN layers show lower energy gaps than those of InGaAsN reported in literatures. The lowest energy gap achieved in this study is 0.79 eV.
ISBN:9781424408740
1424408741
ISSN:1092-8669
DOI:10.1109/ICIPRM.2007.381195