TCAD analysis of wide-spectrum waveguides in high-voltage SOI-CMOS

A TCAD based analysis is presented on the transmission efficiency η of silicon-on-insulator (SOI) and silicon nitride slab waveguides in a high-voltage standard SOI-CMOS technology, for the spectral range of 480 nm - 1300 nm, and isotropic optical excitation via monolithic Si-based LEDs. The effects...

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Bibliographic Details
Published in2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 17 - 18
Main Authors Dutta, Satadal, Orbe, Luis, Schmitz, Jurriaan
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2017
Subjects
Absorption
Light emitting diodes
Optical attenuators
Optical polarization
Optical sensors
Photonics
Silicon
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Summary:A TCAD based analysis is presented on the transmission efficiency η of silicon-on-insulator (SOI) and silicon nitride slab waveguides in a high-voltage standard SOI-CMOS technology, for the spectral range of 480 nm - 1300 nm, and isotropic optical excitation via monolithic Si-based LEDs. The effects of geometry, wavelength and galvanic isolation on η are reported.
ISSN:2158-3242
DOI:10.1109/NUSOD.2017.8009969