Stress-driven 3D-IC placement with TSV keep-out zone and regularity study

• Published in: 2010 IEEE/ACM International Conference on Computer-Aided Design (ICCAD) pp. 669 - 674
• Main Authors: Athikulwongse, K, Chakraborty, A, Jae-Seok Yang, Pan, D Z, Sung Kyu Lim
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.11.2010
• Subjects: Electron mobility; Force; Springs; Stress; Three dimensional displays; Through-silicon vias; Timing

Through-silicon via (TSV) fabrication causes tensile stress around TSVs which results in significant carrier mobility variation in the devices in their neighborhood. Keep-out zone (KOZ) is a conservative way to prevent any devices/cells from being impacted by the TSV-induced stress. However, owing t...