A sub-1V bandgap reference circuit using subthreshold current

A bandgap reference circuit employing subthreshold current is proposed. Only a small fraction of V/sub BE/ is utilized to generate the reference voltage of 170 mV. Since the subthreshold current of MOSFET is used as the current source, the circuit only consumes 2.4 /spl mu/W at supply voltage of 1V....

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Bibliographic Details
Published in2005 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 4253 - 4256 Vol. 5
Main Authors Hongchin Lin, Chao-Jui Liang
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Chaos
Circuit simulation
CMOS technology
Low voltage
Photonic band gap
Random access memory
Semiconductor device measurement
Subthreshold current
Temperature
Threshold voltage
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Summary:A bandgap reference circuit employing subthreshold current is proposed. Only a small fraction of V/sub BE/ is utilized to generate the reference voltage of 170 mV. Since the subthreshold current of MOSFET is used as the current source, the circuit only consumes 2.4 /spl mu/W at supply voltage of 1V. It was fabricated using 0.18 /spl mu/m CMOS triple-well technology on chip area of 0.029 mm/sup 2/. Both the measurement and the simulation demonstrate the reference voltage variation is 1.3mV from -20/spl deg/C to 100/spl deg/C and is 1.1mV per volt for supply voltage from 0.95V to 2.5V.
ISBN:9780780388345
0780388348
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2005.1465570