Hybrid CMOS/memristor circuits

This is a brief review of recent work on the prospective hybrid CMOS/memristor circuits. Such hybrids combine the flexibility, reliability and high functionality of the CMOS subsystem with very high density of nanoscale thin film resistance switching devices operating on different physical principle...

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Bibliographic Details
Published in2010 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 1967 - 1970
Main Authors Strukov, D B, Stewart, D R, Borghetti, J, Li, X, Pickett, M, Ribeiro, G M, Robinett, W, Snider, G, Strachan, J P, Wu, W, Xia, Q, Yang, J J, Williams, R S
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
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Summary:This is a brief review of recent work on the prospective hybrid CMOS/memristor circuits. Such hybrids combine the flexibility, reliability and high functionality of the CMOS subsystem with very high density of nanoscale thin film resistance switching devices operating on different physical principles. Simulation and initial experimental results demonstrate that performance of CMOS/memristor circuits for several important applications is well beyond scaling limits of conventional VLSI paradigm.
ISBN:1424453089
9781424453085
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2010.5537020