Sub-10 nm carbon nanotube transistor

This first demonstration of CNT transistors with channel lengths down to 9 nm shows substantially better scaling behavior than theoretically expected. Numerical simulations suggest that a possible explanation for the surprisingly good performance is a result of the gate modulating both the charge in...

Full description

Saved in:
Bibliographic Details
Published in2011 International Electron Devices Meeting pp. 23.7.1 - 23.7.3
Main Authors Franklin, A. D., Shu-Jen Han, Tulevski, G. S., Luisier, M., Breslin, C. M., Gignac, L., Lundstrom, M. S., Haensch, W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2011
Subjects
Logic gates
Nanowires
Performance evaluation
Scanning electron microscopy
Silicon
Transistors
Online AccessGet full text

Cover

More Information
Summary:This first demonstration of CNT transistors with channel lengths down to 9 nm shows substantially better scaling behavior than theoretically expected. Numerical simulations suggest that a possible explanation for the surprisingly good performance is a result of the gate modulating both the charge in the channel and in the contact regions. The unprecedented performance should ignite exciting new research into improving the purity and placement of nanotubes, as well as optimizing CNT transistor structure and integration. Results from aggressively scaling these molecular-channel transistors exhibit their strong suitability for a low-voltage, high-performance logic technology.
ISBN:1457705060
9781457705069
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2011.6131600