Sub-10 nm carbon nanotube transistor
This first demonstration of CNT transistors with channel lengths down to 9 nm shows substantially better scaling behavior than theoretically expected. Numerical simulations suggest that a possible explanation for the surprisingly good performance is a result of the gate modulating both the charge in...
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Published in | 2011 International Electron Devices Meeting pp. 23.7.1 - 23.7.3 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.12.2011
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Subjects | |
Online Access | Get full text |
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Summary: | This first demonstration of CNT transistors with channel lengths down to 9 nm shows substantially better scaling behavior than theoretically expected. Numerical simulations suggest that a possible explanation for the surprisingly good performance is a result of the gate modulating both the charge in the channel and in the contact regions. The unprecedented performance should ignite exciting new research into improving the purity and placement of nanotubes, as well as optimizing CNT transistor structure and integration. Results from aggressively scaling these molecular-channel transistors exhibit their strong suitability for a low-voltage, high-performance logic technology. |
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ISBN: | 1457705060 9781457705069 |
ISSN: | 0163-1918 2156-017X |
DOI: | 10.1109/IEDM.2011.6131600 |