A temperature dependent lumped-charge model for trench FS-IGBT

This paper proposes a temperature dependent lumped-charge model for FS-IGBT. Due to the evolution of the IGBT structure, the existing lumped-charge IGBT model established for NPT-IGBT is not suitable for the simulation of FS-IGBT. This paper extends the lumped-charge IGBT model including the field-s...

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Bibliographic Details
Published in2018 IEEE Applied Power Electronics Conference and Exposition (APEC) pp. 249 - 254
Main Authors Duan, Yaoqiang, Kang, Yong, Iannuzzo, Francesco, Trintis, Ionut, Blaabjerg, Frede
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2018
Subjects
FS-IGBT
Insulated gate bipolar transistors
Integrated circuit modeling
Junctions
Lumped-charge model
Mathematical model
PN junction model
Semiconductor device modeling
Temperature
Temperature dependence
Temperature dependent
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Summary:This paper proposes a temperature dependent lumped-charge model for FS-IGBT. Due to the evolution of the IGBT structure, the existing lumped-charge IGBT model established for NPT-IGBT is not suitable for the simulation of FS-IGBT. This paper extends the lumped-charge IGBT model including the field-stop (FS) structure and temperature characteristics. The temperature characteristics of the model are considered for both the bipolar part and unipolar part. In addition, a new PN junction model which can distinguish the collector structure is presented and validated by TCAD simulation. Finally, the lumped-charge FS-IGBT model is implemented in PSPICE and verified by experiments with Infineon FF1000R17IE4 IGBT.
ISSN:2470-6647
DOI:10.1109/APEC.2018.8341018