Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC

• Published in: 2016 46th European Microwave Conference (EuMC) pp. 413 - 416
• Main Authors: Benakaprasad, B., Eblabla, A., Li, X., Elgaid, K., Wallis, D. J., Guiney, I., Humphreys, C.
• Format: Conference Proceeding
• Language: English
• Published: European Microwave Association 01.10.2016
• Subjects: Antenna measurements; Gain; Microstrip; Microstrip antennas; RF GaN on LR Si; Silicon; Stack Antenna; Submillimeter wave passive devices; Submillimeter wave technology; Substrates; Terahertz integrated antennas; Terahertz integrated components; TMICs
• DOI: 10.1109/EuMC.2016.7824367

In this paper we demonstrate a THz microstrip stack antenna on GaN-on-low resistivity silicon substrates (ρ <; 40 Ω.cm). To reduce losses caused by the substrate and to enhance performance of the integrated antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold in addition to a layer of benzocyclobutene (BCB). A second circular patch is elevated in air using gold posts, making this design a stack configuration. The demonstrated antenna shows a measured resonance frequency in agreement with the modeling at 0.27 THz and a measured S11 as low as -18 dB was obtained. A directivity, gain and radiation efficiency of 8.3 dB, 3.4 dB, and 32% respectively was exhibited from the 3D EM model. To the authors' knowledge, this is the first demonstrated THz integrated microstrip stack antenna for TMIC (THz Monolithic Integrated Circuits) technology; the developed technology is suitable for high performance III-V material on low resistivity/high dielectric substrates.