Mobility improvement in nanowire junctionless transistors by uniaxial strain

Improvement of current drive in n- and p-type silicon junctionless MOSFETs using strain is demonstrated. The extracted piezoresistance coefficients are in good agreement with the piezoresistive theory and the published coefficients for bulk silicon even for 10 nm-thick silicon nanowires as narrow as...

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Bibliographic Details
Published in2010 IEEE International SOI Conference (SOI) pp. 1 - 2
Main Authors Raskin, J.-P, Colinge, J.-P, Ferain, I, Kranti, A, Lee, C.-W, Dehdashti, N, Yan, R, Razavi, P, Yu, R
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2010
Subjects
Current measurement
Logic gates
MOSFETs
Piezoresistance
Silicon
Stress
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Summary:Improvement of current drive in n- and p-type silicon junctionless MOSFETs using strain is demonstrated. The extracted piezoresistance coefficients are in good agreement with the piezoresistive theory and the published coefficients for bulk silicon even for 10 nm-thick silicon nanowires as narrow as 20 nm.
ISBN:9781424491308
1424491304
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2010.5641390