High-performance 81-86 GHz transceiver chipset for Point-to-Point communication in SiGe BiCMOS technology

Fully integrated chipset at E-band frequencies in a superhetrodyne architecture covering the 81-86 GHz band was designed and fabricated in 0.13 μm SiGe technology. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, variable gain IF amplifier, quadrature IF-to-baseb...

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Bibliographic Details
Published in2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) pp. 417 - 420
Main Authors Ben Yishay, Roee, Katz, Oded, Sheinman, Benny, Carmon, Roi, Levinger, Run, Mazor, Nadav, Elad, Danny
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2015
Subjects
Attenuators
E-band
Gain
Mixers
Point-to-Point
Power amplifiers
Radio frequency
Receivers
SiGe
Silicon germanium
Transceiver
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Summary:Fully integrated chipset at E-band frequencies in a superhetrodyne architecture covering the 81-86 GHz band was designed and fabricated in 0.13 μm SiGe technology. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, variable gain IF amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and frequency multiplier by four (quadrupler). The receiver chip achieves maximum gain of 73 dB, 6 dB noise figure, better than -12 dBm IIP3, with more than 65 dB dynamic range, and consumes 600 mW. The transmitter chip includes a power amplifier (PA), image-reject driver, variable RF attenuators, IF-to-RF upconverting mixer, variable gain IF amplifier, quadrature baseband-to-IF modulator, PLL, and frequency quadrupler. It achieves output power at P1dB of 16.6 dBm, P sat of 18.8 dBm on a single-ended output and consumes 1.8 W.
DOI:10.1109/RFIC.2015.7337794