Computational study of graphene FETs (GFETs) as room-temperature terahertz emitter

The effect of electron scattering on the plasma-wave instability in the channel of GFETs has been studied through solving the governing hydrodynamic (HD) equations numerically, which are based on the linear energy-momentum dispersion, i.e., Dirac cone, of graphene [1]. It is revealed that there exis...

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Published in2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 173 - 176
Main Authors Li, Wenshen, Dong, Shi, Wang, He, Zhang, Jinyu, Wang, Yan, Yu, Zhiping
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.09.2015
Subjects
Channels
Chemicals
Computer simulation
Devices
Electron mobility
Graphene
Hydrodynamics
Instability
Logic gates
Mathematical analysis
Plasma temperature
Scattering
Semiconductors
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Summary:The effect of electron scattering on the plasma-wave instability in the channel of GFETs has been studied through solving the governing hydrodynamic (HD) equations numerically, which are based on the linear energy-momentum dispersion, i.e., Dirac cone, of graphene [1]. It is revealed that there exists a critical scattering strength determined by the carrier mobility and channel length, above which the instability cannot be sustained. While analytical solution can only be obtained under the dissipationless condition, numerical calculation is conducted considering the scattering term. We conclude that the realization of room temperature terahertz emitter is possible in GFETs as long as careful device design and high quality graphene channel are achieved.
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ISBN:1467378585
9781467378581
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2015.7292287