Electrical model of a PMOS body biased structure in triple-well technology under pulsed photoelectric laser stimulation

• Published in: 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits pp. 134 - 137
• Main Authors: Borrel, N., Champeix, C., Kussener, E., Rahajandraibe, W., Lisart, M., Sarafianos, A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2015
• Subjects: Decision support systems
• ISSN: 1946-1542; 1946-1550
• DOI: 10.1109/IPFA.2015.7224351

This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions with an integrated circuit using a triple-well process. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper presents measurements of the photoelectric currents induced by a pulsed-laser on a PMOS transistor in triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. This evaluation compares the triple-well structure to a classical Psubstrate-only structure of PMOS transistor. It reveals the possible activation of the bipolar transistors. Based on these experimental measurements, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation.