Wideband 200 GHz injection-locked frequency divide-by-two MMIC in GaAs mHEMT technology
Two G-band (140 to 220 GHz) injection-locked frequency divider (ILFD) monolithic microwave integrated circuits (MMICs) have been developed in a 35nm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) process for application in signal sources of next generation multi gigabit per seco...
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Published in | 2015 IEEE 15th Mediterranean Microwave Symposium (MMS) pp. 1 - 4 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.11.2015
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Subjects | |
Online Access | Get full text |
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