Wideband 200 GHz injection-locked frequency divide-by-two MMIC in GaAs mHEMT technology

• Published in: 2015 IEEE 15th Mediterranean Microwave Symposium (MMS) pp. 1 - 4
• Main Authors: Messinger, T., Antes, J., Wagner, S., Leuther, A., Kallfass, I.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.11.2015
• Subjects: Bandwidth; Frequency conversion; Frequency measurement; Gallium arsenide; mHEMTs; MMICs; Resonant frequency

Two G-band (140 to 220 GHz) injection-locked frequency divider (ILFD) monolithic microwave integrated circuits (MMICs) have been developed in a 35nm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) process for application in signal sources of next generation multi gigabit per seco...