Wideband 200 GHz injection-locked frequency divide-by-two MMIC in GaAs mHEMT technology

Two G-band (140 to 220 GHz) injection-locked frequency divider (ILFD) monolithic microwave integrated circuits (MMICs) have been developed in a 35nm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) process for application in signal sources of next generation multi gigabit per seco...

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Bibliographic Details
Published in2015 IEEE 15th Mediterranean Microwave Symposium (MMS) pp. 1 - 4
Main Authors Messinger, T., Antes, J., Wagner, S., Leuther, A., Kallfass, I.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2015
Subjects
Bandwidth
Frequency conversion
Frequency measurement
Gallium arsenide
mHEMTs
MMICs
Resonant frequency
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Summary:Two G-band (140 to 220 GHz) injection-locked frequency divider (ILFD) monolithic microwave integrated circuits (MMICs) have been developed in a 35nm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) process for application in signal sources of next generation multi gigabit per second communication links and high-resolution imaging systems. Both devices are based on a cascode divider core followed by a single-stage post-amplifier, but differ in the 50 and 14 μm ground-to-ground spacing of the applied grounded coplanar waveguide (GCPW) environment. The measured maximum input frequencies at a 0dBm input power level are 206 and 210 GHz with wide operating bandwidths of 26 and 14 GHz and relative bandwidths of 13 and 7 %, respectively. To the authors' best knowledge, this represents the highest operating frequencies obtained by frequency dividers in GaAs HEMT based technologies.
DOI:10.1109/MMS.2015.7375385