Low-cost and TSV-free monolithic 3D-IC with heterogeneous integration of logic, memory and sensor analogy circuitry for Internet of Things

For the first time, a CO2 far-infrared laser annealing (CO2-FIR-LA) technology was developed as the activation solution to enable highly heterogeneous integration without causing device degradation for TSV-free monolithic 3DIC. This process is capable to implement small-area-small-load vertical conn...

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Published in2015 IEEE International Electron Devices Meeting (IEDM) pp. 25.4.1 - 25.4.4
Main Authors Wu, Tsung-Ta, Shen, Chang-Hong, Shieh, Jia-Min, Huang, Wen-Hsien, Wang, Hsing-Hsiang, Hsueh, Fu-Kuo, Chen, Hisu-Chih, Yang, Chih-Chao, Hsieh, Tung-Ying, Chen, Bo-Yuan, Shiao, Yu-Shao, Yang, Chao-Shun, Huang, Guo-Wei, Li, Kai-Shin, Hsueh, Ting-Jen, Chen, Chien-Fu, Chen, Wei-Hao, Yang, Fu-Liang, Chang, Meng-Fan, Yeh, Wen-Kuan
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.12.2015
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Summary:For the first time, a CO2 far-infrared laser annealing (CO2-FIR-LA) technology was developed as the activation solution to enable highly heterogeneous integration without causing device degradation for TSV-free monolithic 3DIC. This process is capable to implement small-area-small-load vertical connectors, gate-first high-k/metal gate MOSFETs and non-Al metal inter-connects. Such a far-infrared laser annealing exhibits excellent selective activation capability that enables performance-enhanced stacked sub-40nm UTB-MOSFETs (Ion-enhanced over 50 %). Unlike TSV-based 3D-IC, this 3D Monolithic IC enables ultra-wide-IO connections between layers to achieve high bandwidth with less power consumption. A test chip with logic circuits, 6T SRAM, ReRAM, sense amplifiers, analog amplifiers and gas sensors was integrated to confirm the superiority in heterogeneous integration of proposed CO2-FIR-LA technology. This chip demonstrates the most variable functions above reported 3D Monolithic ICs. This CO2-FIR-LA based TSV-free 3D Monolithic IC can realize low cost, small footprint, and highly heterogeneous integration for Internet of Things.
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ISSN:2156-017X
DOI:10.1109/IEDM.2015.7409765