Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications

AlGaN/GaN-on-Si Heterostructure Field-Effect Transistors (HFETs) for power switching are investigated in this paper. A design study for a fast switching environment for power devices is provided including an analysis of the technology, the fabrication, and the performances of large-area AlGaN/GaN-on...

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Bibliographic Details
Published in2014 16th European Conference on Power Electronics and Applications pp. 1 - 10
Main Authors Weiss, B., Reiner, R., Quay, R., Waltereit, P., Muller, S., Benkhelifa, F., Mikulla, M., Schlechtweg, M., Ambacher, O.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2014
Subjects
Aluminum gallium nitride
Gallium nitride
HEMTs
HFET
high frequency power converter
Logic gates
MODFETs
packaging
Photonic band gap
Switches
wide bandgap devices
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Summary:AlGaN/GaN-on-Si Heterostructure Field-Effect Transistors (HFETs) for power switching are investigated in this paper. A design study for a fast switching environment for power devices is provided including an analysis of the technology, the fabrication, and the performances of large-area AlGaN/GaN-on-Si HFETs. Different power packages and high-current drivers are compared and the results are being discussed. Furthermore the power conversion efficiency is being evaluated for different power- and switching-frequency ranges by means of a converter test board. At 100 kHz efficiencies up to 98.7 % at power levels of up to 1.6 kW could be achieved. At 1 MHz and 1 kW input power an efficiency of 97.1 % was measured.
DOI:10.1109/EPE.2014.6910745