Injection inhomogeneity and lasing thershold in III-nitride multi-QW deep-UV laser diodes

Lasing threshold conditions have been analyzed in deep-UV (DUV) multiple-QW (MQW) III-nitride laser diode (LD) structures with different QW confinement depth. Shallow QWs with smaller internal polarization fields reveal better QW emission characteristics including lower QW transparency population an...

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Bibliographic Details
Published in2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 25 - 26
Main Authors Kisin, Mikhail V., Mamedov, Denis V., Chih-Li Chuang, El-Ghoroury, Hussein S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2015
Subjects
Aluminum
inhomogeneous carrier injection
laser diodes
Lasers
lasing threshold
multiple quantum wells
Nonhomogeneous media
Optical polarization
Quantum well devices
Sociology
Statistics
UV emission
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Summary:Lasing threshold conditions have been analyzed in deep-UV (DUV) multiple-QW (MQW) III-nitride laser diode (LD) structures with different QW confinement depth. Shallow QWs with smaller internal polarization fields reveal better QW emission characteristics including lower QW transparency population and higher differential gain. In MQW LD structures, however, the high-gain operation of shallow QWs is hindered by insufficient QW injection due to increased carrier leakage from shallow-QW active region. Deep active QWs can attain higher operational populations and provide for higher LD optical gain; however, LDs designed with deeper active QWs suffer from MQW population non-uniformity due to increased inhomogeneity of carrier injection. Underpumped deep QWs reduce the total modal gain of the LD structure thus deteriorating the lasing threshold and LD power conversion (wall-plug) efficiency.
ISBN:9781479983780
1479983780
ISSN:2158-3234
DOI:10.1109/NUSOD.2015.7292804