Loss mechanisms and switching performance analysis for efficient mm-Waves Class-E PAs

In this paper, loss mechanisms of monolithic high frequency Class E PAs are studied. The switching behavior is analyzed to understand the discrepancy between common design equations and optimal design values as frequency scales up. Analytical results are verified by spice simulations. In addition, a...

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Bibliographic Details
Published in2015 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 1694 - 1697
Main Authors El-Aassar, Omar, El-Nozahi, Mohamed, Ragai, Hani F.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2015
Subjects
Capacitance
CMOS integrated circuits
Inductors
Mathematical model
Semiconductor device modeling
Switches
Switching circuits
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Summary:In this paper, loss mechanisms of monolithic high frequency Class E PAs are studied. The switching behavior is analyzed to understand the discrepancy between common design equations and optimal design values as frequency scales up. Analytical results are verified by spice simulations. In addition, a design recipe is proposed for mm-Waves PAs. The design approach is adopted to compare different technology nodes including the 130 nm, 90 nm and 65 nm bulk CMOS. Newer technologies show better power added efficiency (PAE) only at the mm-Waves regime. Simulations show that the PAE is boosted from 31% to 40% when the proposed design methodology is applied at 60 GHz using the 65 nm node.
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2015.7168978