Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon

In this work, we show for the first time that VLSI-like gate-first self-aligned InGaAs MOSFETs on insulator on Si featuring raised source/drain (SID) can be fabricated at 300 nm pitch with gate lengths down to 24 nm. This is made possible thanks to the excellent thermal stability of ultra-thin-body...

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Bibliographic Details
Published in2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) pp. 143 - 146
Main Authors Czornomaz, L., Daix, N., Kerber, P., Lister, K., Caimi, D., Rossel, C., Sousa, M., Uccelli, E., Fompeyrine, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2013
Subjects
Indium gallium arsenide
Insulators
Logic gates
MOSFET
Silicon
Substrates
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Summary:In this work, we show for the first time that VLSI-like gate-first self-aligned InGaAs MOSFETs on insulator on Si featuring raised source/drain (SID) can be fabricated at 300 nm pitch with gate lengths down to 24 nm. This is made possible thanks to the excellent thermal stability of ultra-thin-body and BOX InGaAs on insulator which can be used as a crystalline seed for III-V regrowth. The devices exhibit an excellent electrostatic integrity down to L G = 34 nm, comparable to the best reported tri-gate devices. We compare experimental device data to electrostatic simulations for bulk/on-insulator/tri-gate structures and extrapolate their ultimate scalability to very short L G .
ISSN:1930-8876
DOI:10.1109/ESSDERC.2013.6818839