Microstructure and piezoelectric properties of c-BN Nano-films deposited on Si by RF sputtering for piezoelectric devices

In this paper, boron nitride (BN) films were deposited on silicon substrates by RF magnetron sputtering under different bias voltages. Microstructure and piezoelectric properties of BN films were characterized by FTIR, SEM, AFM and PFM. The results show that surface of films are of lower roughness,...

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Bibliographic Details
Published in2013 IEEE 5th International Nanoelectronics Conference (INEC) pp. 49 - 51
Main Authors Wang Fang, Baohe, Y., Wei Jun, Zhang Kailiang
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.01.2013
Subjects
Bias
bias voltage
Boron nitride
c-BN
Conferences
Electric potential
FTIR and PFM
Microstructure
Morphology
Nanoelectronics
Piezoelectric devices
Piezoelectricity
Silicon
sputtering
Surface morphology
Surface topography
Surface treatment
Voltage
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Summary:In this paper, boron nitride (BN) films were deposited on silicon substrates by RF magnetron sputtering under different bias voltages. Microstructure and piezoelectric properties of BN films were characterized by FTIR, SEM, AFM and PFM. The results show that surface of films are of lower roughness, while the highest cubic phase volume fraction appeared (about 95%) under bias voltage 120V. And the deposited c-BN films are of apparent piezoelectric properties both in plane and vertical direction by PFM figures.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Conference-1
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SourceType-Conference Papers & Proceedings-2
ISBN:1467348406
9781467348409
ISSN:2159-3523
2159-3523
DOI:10.1109/INEC.2013.6465950