Effects of coverage factor, inhomogeneous broadening and cavity length on static and dynamic behavior of self-assembled quantum-dot laser by using circuit-level modeling

• Published in: 2013 Spanish Conference on Electron Devices pp. 55 - 58
• Main Authors: Razm-Pa, M., Emami, F.
• Format: Conference Proceeding Journal Article
• Language: English
• Published: IEEE 01.02.2013
• Subjects: broedening factor; Circuits; coverage factor; Devices; Electric power generation; equivalent circuit modeling; Holes; Integrated circuit modeling; Laser excitation; Laser modes; Lasers; Mathematical model; Mathematical models; Modulation; Nonhomogeneous media; Power generation; Quantum dot lasers; Quantum dots
• ISBN: 9781467346665; 1467346667
• ISSN: 2163-4971; 2643-1300
• DOI: 10.1109/CDE.2013.6481341

In this paper, a new circuit model for self-assembled quantum dot (SAQD) laser made by InGaAs/GaAs structures is presented based on the excited state and the standard rate equations. The model improves the previously offered circuit models and also provides and investigates the performance of this kind of laser. The effects of QDs coverage factor, inhomogeneous broadening, which its physical source is the size fluctuation of quantum dot in forming self assembled quantum dots, as well as cavity length, on SAQD laser have been analyzed. The results of simulation show that the increase of cavity length as well as the increase of QDs coverage causes the output power to increase. On the other hand, the coverage factor increase and the inhomogeneous broadening degradation lead to increase the modulation band width.