Extended Base Schottky-Collector Bipolar Charge Plasma Transistor

In this paper, we have proposed a new device structure of schottky-collector bipolar charge plasma transistor (SC-BCPT) with an extended base of thickness (t B = 25 nm). The charge plasma concept eliminates different doping requirements for emitter and base regions, as a result, simplified fabricati...

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Bibliographic Details
Published in2015 IEEE International Symposium on Nanoelectronic and Information Systems pp. 137 - 140
Main Authors Bramhane, Lokesh Kumar, Singh, Jawar
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2015
Subjects
Bipolar transistors
charge plasma
current gain
cut-off frequency
Cutoff frequency
Doping
Metals
Plasmas
Schottky
Silicon
Transistors
workfunction
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Summary:In this paper, we have proposed a new device structure of schottky-collector bipolar charge plasma transistor (SC-BCPT) with an extended base of thickness (t B = 25 nm). The charge plasma concept eliminates different doping requirements for emitter and base regions, as a result, simplified fabrication process and improved current gain (ß). However, extended base concept yields improved cut-off frequency (f T ) of the proposed device. The Hafnium and stack of TiN/HfSiOx/SOI doped with Fluorine metal electrodes were employed to induce electrons and holes concentration at the emitter and base regions, respectively. Two-dimensional TCAD simulations of the proposed device demonstrate higher current gain of 37×10 6 and a peak cut-off frequency of 43.04 GHz as compared to the conventional SC-BCPT.
DOI:10.1109/iNIS.2015.67