Observation of light scattering properties of silicon nanowire arrays

Silicon nanowire (SiNW) arrays were pre metal assisted chemical etching (MAE) method for the ap to solar cells. The SiNW arrays were mechanically peeled the Si substrate to obtain the optical properties of SiNW themselves. The absorptance of the SiNW array with the 10 μm is much higher than theoreti...

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Bibliographic Details
Published in2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) pp. 1880 - 1884
Main Authors Kurokawa, Yasuyoshi, Watanabe, Yuya, Kato, Shinya, Yamada, Yasuharu, Yamada, Akira, Ohta, Yoshimi, Niwa, Yusuke, Hirota, Masaki
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2013
Subjects
angular distribution function
light scatterin generation
Mie scattering
Optical arrays
Optical device fabrication
Optical imaging
Optical scattering
Photovoltaic cells
Silicon
silicon nanowire
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Summary:Silicon nanowire (SiNW) arrays were pre metal assisted chemical etching (MAE) method for the ap to solar cells. The SiNW arrays were mechanically peeled the Si substrate to obtain the optical properties of SiNW themselves. The absorptance of the SiNW array with the 10 μm is much higher than theoretical absorptance of 10 flat Si wafer. The angular distribution function (transmittance of SiNW arrays was also measured. It was that the Mie-related scattering plays an important ro strong optical confinement of the SiNW arrays.
ISSN:0160-8371
DOI:10.1109/PVSC.2013.6744510