Raman scattering and terahertz spectroscopic characteristics of longitudinal optical phonons in i-GaAs/n-GaAs epitaxial structures

Summary form only given. We have investigated longitudinal optical phonons (LO) characteristics in i-GaAs/n-GaAs epitaxial structures. The LO phonons and LO phonon-plasmon coupled modes were observed in the Raman scattering spectra, whereas only the coherent LO phonon was detected in terahertz spect...

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Published in2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) p. 1
Main Authors Takeuchi, Hideo, Asai, Souta, Tsuruta, Shuichi, Sumioka, Takahiro, Nakayama, Masaaki
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2015
Subjects
Electric fields
Epitaxial growth
Measurement by laser beam
Optical polarization
Optical scattering
Phonons
Raman scattering
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Summary:Summary form only given. We have investigated longitudinal optical phonons (LO) characteristics in i-GaAs/n-GaAs epitaxial structures. The LO phonons and LO phonon-plasmon coupled modes were observed in the Raman scattering spectra, whereas only the coherent LO phonon was detected in terahertz spectroscopy. We conclude that the initial polarization is responsible for emission of the co-herent-LO-phonon terahertz wave.
ISSN:2162-2027
DOI:10.1109/IRMMW-THz.2015.7327888