Photoresponse of InGaZnO thin film transistor to ultraviolet illumination

An amorphous indium gallium zinc oxide (IGZO) thin film transistor (TFT) was fabricated and its respose to 405 nm ultraviolet illumination was investigated. It is found that the OFF-state current is dramaticaly influenced by the illumation. The photoresponse, including photocurrent, rise time and re...

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Published in2016 5th International Symposium on Next-Generation Electronics (ISNE) pp. 1 - 2
Main Authors Shan, Bolin, Liu, Libin, Sun, Chuanchuan, Wang, Jing, Xu, Jun, Liang, Renrong
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.05.2016
Subjects
Density measurement
Electronics
IGZO
Illumination
Lighting
Logic gates
Photoconductivity
Photocurrent
Photoelectric effect
photoresponse
Semiconductor devices
Silicon
thin film transistor
Thin film transistors
Threshold voltage
Ultraviolet
Voltage
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Summary:An amorphous indium gallium zinc oxide (IGZO) thin film transistor (TFT) was fabricated and its respose to 405 nm ultraviolet illumination was investigated. It is found that the OFF-state current is dramaticaly influenced by the illumation. The photoresponse, including photocurrent, rise time and recovery time, is dependent on the bias condition, especially the gate voltage (Vgs). Higher photocurrent and smaller rise time are observed at higher Vgs, indicating that a lower Vgs is desired for a faster recovery characteristic.
Bibliography:ObjectType-Article-2
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SourceType-Conference Papers & Proceedings-2
ISSN:2378-8607
DOI:10.1109/ISNE.2016.7543282