Tuning of resistance of nanogaps using field-emission-induced electromigration with feedback control scheme
We report a newly investigated technique for the tuning of tunnel resistance of nanogaps using electromigration phenomena induced by a field emission current, which is called "activation" method. First, Planar-type initial nanogaps of Ni separated by 20-50 nm were defined on SiO 2 /Si subs...
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Published in | 2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013) pp. 1141 - 1144 |
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Main Authors | , , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
IEEE
01.08.2013
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Subjects | |
Online Access | Get full text |
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Summary: | We report a newly investigated technique for the tuning of tunnel resistance of nanogaps using electromigration phenomena induced by a field emission current, which is called "activation" method. First, Planar-type initial nanogaps of Ni separated by 20-50 nm were defined on SiO 2 /Si substrates. Then, a bias current was applied to the initial Ni nanogaps at room temperature using a current source. Here, we propose a feedback approach during activation procedures, in order to precisely control the resistance of nanogaps at room temperature. We call this method "feedback-controlled activation (FCA)", and it is revealed that control characteristics of tunnel resistance of nanogaps are successfully improved using FCA procedure, as compared with conventional activation without feedback scheme. These results indicate that a feedback approach is useful for the stable control of tunnel resistance of nanogaps using activation method. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Conference-1 ObjectType-Feature-3 content type line 23 SourceType-Conference Papers & Proceedings-2 |
ISSN: | 1944-9399 1944-9380 |
DOI: | 10.1109/NANO.2013.6721060 |