The design of integrated 3-GHz to 11-GHz CMOS transmitter for full-band ultra-wideband (UWB) applications

• Published in: 2008 IEEE International Symposium on Circuits and Systems pp. 2709 - 2712
• Main Authors: Wen-Chieh Wang, Chang-Ping Liao, Yi-Kai Lo, Zue-Der Huang, Shahroury, Fadi R., Chung-Yu Wu
• Format: Conference Proceeding Journal Article
• Language: English
• Published: IEEE 01.01.2008
• Subjects: CMOS technology; Filters; Frequency conversion; Gain; Inductance; Mixers; Radiofrequency amplifiers; Transmitters; Ultra wideband technology; Voltage
• ISBN: 9781424416837; 1424416833
• ISSN: 0271-4302; 2158-1525
• DOI: 10.1109/ISCAS.2008.4542016

The CMOS integrated 3-GHz to 11-GHz transmitter for full-band UWB applications is proposed and designed in 0.13-μm CMOS technology. The designed UWB transmitter is integrated with a 2:1 frequency divider, a quadrature up-conversion mixer, a balanced RF amplifier, and a 3-stage cascaded poly-phase filter. The technique of inductance peaking has been adopted to achieve 14-band operation for UWB applications. The transmitter has an average conversion gain of 12.8 dB with the gain ripple of around ±1.4 dB among the whole frequency band. The average input 1-dB compression point (IP. 1dB) of the 14 bands is −12.2 dBm and the average output 1-dB compression point (OP -1dB ) of the 14 bands is −0.4 dBm. The transmitter dissipates the power of 53.1 mW from the supply voltage of 1.2 V and occupies the chip area of 1930×1635 μm 2 . This chip is designed in 0.13-μm 1P8M CMOS technology and under fabrication.