Modeling and verification of single event transients in deep submicron technologies

Digital single event transients (DSETs) are becoming an increasing concern for deep submicron ICs. As device feature sizes shrink, digital circuits become faster, have smaller parasitics, and become more susceptible to single event effects (SEEs). If an ionizing particle creates enough charge to be...

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Bibliographic Details
Published in2004 IEEE International Reliability Physics Symposium. Proceedings pp. 673 - 674
Main Authors Gadlage, M.J., Schrimpf, R.D., Benedetto, J.M., Eaton, P.H., Turflinger, T.L.
Format Conference Proceeding
LanguageEnglish
Published Piscataway NJ IEEE 2004
Subjects
Applied sciences
Circuit properties
Circuit simulation
Circuit testing
Cranes
Digital circuits
Discrete event simulation
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Photoconductivity
Predictive models
Pulse circuits
Pulse inverters
Shift registers
SPICE
Digital circuit
Miniaturization
Single event upset
Modeling
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Summary:Digital single event transients (DSETs) are becoming an increasing concern for deep submicron ICs. As device feature sizes shrink, digital circuits become faster, have smaller parasitics, and become more susceptible to single event effects (SEEs). If an ionizing particle creates enough charge to be collected on a node within a combinatorial gate, a transient pulse will be formed that may propagate through the circuit and be latched in as bad data. In order to predict the response of a circuit to a single event, people have long used circuit and device level simulations. In this paper, we show that when dealing with deep submicron technologies, knowing the pulse structure of the transient is crucial to predicting its propagation distance accurately.
ISBN:9780780383159
078038315X
DOI:10.1109/RELPHY.2004.1315445