Fabrication of single-electron transistors based on proximity effects of electron-beam lithography

A simple method, based on the proximity effects of electron-beam lithography, which caused by overlapping the dosage distribution of the discretely electron beam written nano-dots, was employed to fabricate nano-structure containing narrow constrictions. A Si-based nano-dot with two narrow tunnel ju...

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Bibliographic Details
Published in4th IEEE Conference on Nanotechnology, 2004 pp. 47 - 49
Main Authors HU, Shu-Fen, FANG, Yi-Pin, CHOU, Ya-Chang, HWANG, Gwo-Jen
Format Conference Proceeding
LanguageEnglish
Published Piscataway NJ IEEE 2004
Subjects
Applied sciences
Electrodes
Electron beams
Electronics
Etching
Exact sciences and technology
Fabrication
Lithography
Molecular electronics, nanoelectronics
Proximity effect
Quantum dots
Resists
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor films
Single electron transistors
Transistors
Molecular electronics
Quantum dot
Dry etching
Electron beam effects
Electron beam
Proximity effect
Tunnel junction
Nanostructure
Oxidation
Nanoelectronics
Single electron transistors
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Summary:A simple method, based on the proximity effects of electron-beam lithography, which caused by overlapping the dosage distribution of the discretely electron beam written nano-dots, was employed to fabricate nano-structure containing narrow constrictions. A Si-based nano-dot with two narrow tunnel junctions called single electron transistor was formed after dry etching and thermal oxidation process since the overlapping region is much narrower than the diameter of the nano-dot. The electric characteristic of the SET was found to be consistent with the expected behavior of electron transport through a gated quantum dot.
ISBN:0780385365
9780780385368
DOI:10.1109/NANO.2004.1392245