Drain biased TDDB lifetime model for ultra thin gate oxide

For drain biased TDDB, hole injection enhanced gate oxide degradation has been discussed and modeled, and the model is in excellent agreement with the experimental data. Although hole injection will degrade gate oxide, lifetime of drain biased TDDB is better than gate bias due to stress area differe...

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Bibliographic Details
Published in2004 IEEE International Reliability Physics Symposium. Proceedings pp. 589 - 590
Main Authors Chin-Yuan Ko, Tsai, Y.S., Liao, P.J., Wang, J.J., Oates, A., Wu, K.
Format Conference Proceeding
LanguageEnglish
Published Piscataway NJ IEEE 2004
Subjects
Applied sciences
Degradation
Electric breakdown
Electronics
Electrostatic discharge
Equations
Exact sciences and technology
Hot carriers
Materials
MOSFET circuits
Semiconductor device manufacture
Stress
Virtual manufacturing
Voltage
Ultrathin films
Time dependence
Hole
Electric breakdown
Gate oxide
Transistor gate
Durability
Reliability
Damaging
Charge carrier injection
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Summary:For drain biased TDDB, hole injection enhanced gate oxide degradation has been discussed and modeled, and the model is in excellent agreement with the experimental data. Although hole injection will degrade gate oxide, lifetime of drain biased TDDB is better than gate bias due to stress area difference and strong area dependence (/spl beta/ is small) for ultra thin gate oxide; however, it may become a concern for thick oxide for drain bias.
ISBN:9780780383159
078038315X
DOI:10.1109/RELPHY.2004.1315403