On-wafer electro-mechanical characterization of silicon MEMS switches

• Published in: Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 2003 pp. 281 - 285
• Main Authors: Lorenzelli, L., Rangra, K.J., Collini, C., Giacomozzi, F., Margesin, B., Pianegiani, F.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2003
• Subjects: Applied sciences; Capacitance measurement; Character generation; Circuit properties; Communication switching; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Fabrication; Micro- and nanoelectromechanical devices (mems/nems); Microswitches; Radiofrequency microelectromechanical systems; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Switches; Switching, multiplexing, switched capacity circuits; Voltage; Wireless communication; Space application; Microprobe; Capacitance; Durability; Selector switch; Reliability; Space switching; Microelectromechanical device; Wafer
• ISBN: 078037066X; 9780780370661
• DOI: 10.1109/DTIP.2003.1287053

The feasibility of integrating the RF MEMS switches in space and wireless communication systems has generated tremendous interest in related design, fabrication and characterization methodologies. The space applications make long term reliability of the devices a very pertinent issue and involves both the process and device characterization. In this paper we describe the experimental setup and measurement results on RF MEMS switches fabricated for DC to 30 GHz applications. The on-wafer experimental setup, based on standard manual microprobe station provides dual pulse actuation voltage waveforms with programmable period and amplitude, ranging from 10/sup -5/ to 1 sec and 0-200 volts respectively. The usefulness of the dual-pulse testing is demonstrated by the minimal charge generation in the dielectric layer and capacitance measurements with negligible variations over long measurement periods.