Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors

Hafnium zirconium oxide (HZO) doesn't meet en-durance requirements for certain applications such as data logging. We introduce aluminum-doped HZO (HZAO)-based metal-ferroelectric-metal (MFM) capacitors integrated in BEoL to improve endurance characteristics. Wake-up characteristics, 2P_{r} and...

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Bibliographic Details
Published in2024 IEEE International Reliability Physics Symposium (IRPS) pp. 1 - 5
Main Authors Sunbul, Ayse, Lehninger, David, Hoffmann, Raik, Mahne, Hannes, Bernert, Kerstin, Thiem, Steffen, Kampfe, Thomas, Siedel, Konrad, Lederer, Maximilian, Eng, Lukas M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 14.04.2024
Subjects
BEoL MFM
Capacitors
endurance
Extrapolation
ferroelectric
Hafnium
hafnium oxide
memory
Nonvolatile memory
reliability
Temperature
Temperature measurement
Zirconium
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Summary:Hafnium zirconium oxide (HZO) doesn't meet en-durance requirements for certain applications such as data logging. We introduce aluminum-doped HZO (HZAO)-based metal-ferroelectric-metal (MFM) capacitors integrated in BEoL to improve endurance characteristics. Wake-up characteristics, 2P_{r} and 2E_{c} are studied. Based on measurements under severe conditions, endurance was extrapolated with respect to electric field, temperature, frequency, and MFM area. Outstandingly enhanced endurance of above 10 15 cycles are predicted. This enables usage of ferroelectric memories for data logging applications.
ISSN:1938-1891
DOI:10.1109/IRPS48228.2024.10529302