Room Temperature Nanophononics from 1 GHz - 110 GHz with Composite Piezoelectric Transducer HBARs

This paper presents epitaxially grown high overtone bulk acoustic resonators (epi-HBARs) demonstrating a dense spectrum of acoustic/phononic cavity overtone modes in an unprecedented range from 1 GHz to 110 GHz in a single device at room temperature. A critical element is the use of the composite st...

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Bibliographic Details
Published in2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS) pp. 1087 - 1090
Main Authors Gokhale, Vikrant J., Roussos, Jason A., Hardy, Matthew T., Katzer, D. Scott, Downey, Brian P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 21.01.2024
Subjects
acoustic phonons
Acoustics
epitaxial thin films
High overtone bulk acoustic resonators
Micromechanical devices
phonon spectroscopy
Piezoelectric transducers
Q-factor
Resonators
scandium aluminum nitride
Spectroscopy
Temperature distribution
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Summary:This paper presents epitaxially grown high overtone bulk acoustic resonators (epi-HBARs) demonstrating a dense spectrum of acoustic/phononic cavity overtone modes in an unprecedented range from 1 GHz to 110 GHz in a single device at room temperature. A critical element is the use of the composite structure of the ScAlN/AlN piezoelectric transducer to enable preferential transduction of higher order envelope modes. The strongest modes presented in this work lie in the 35 GHz - 50 GHz envelope, with Bode quality factor (Q Bode ) as high as 1000 (f × Q > 4×10 13 Hz). This extreme embodiment of a multi-mode MEMS resonator can be developed into a platform for phonon spectroscopy and coupled-physics experiments.
ISSN:2160-1968
DOI:10.1109/MEMS58180.2024.10439362