Low-frequency noise figures-of-merit in RF SiGe HBT technology

We present the first systematic experimental and modeling results of corner frequency (f/sub C/) and the corner frequency to cut-off frequency ratio (f/sub C//f/sub T/) for SiGe HBTs in a commercial SiGe RF technology. The f/sub C//f/sub T/ ratio is examined as a function of biasing current for SiGe...

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Published in2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) Vol. 1; pp. 179 - 182 vol.1
Main Authors Jin Tang, Guofu Niu, Zhenrong Jin, Cressler, J.D., Shiming Zhang, Joseph, A.J., Harame, D.L.
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 2002
Subjects
Cutoff frequency
Doping profiles
Gallium arsenide
Germanium silicon alloys
Heterojunction bipolar transistors
Low-frequency noise
Noise figure
Noise measurement
Radio frequency
Silicon germanium
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Summary:We present the first systematic experimental and modeling results of corner frequency (f/sub C/) and the corner frequency to cut-off frequency ratio (f/sub C//f/sub T/) for SiGe HBTs in a commercial SiGe RF technology. The f/sub C//f/sub T/ ratio is examined as a function of biasing current for SiGe HBTs featuring multiple collector doping profiles (breakdown voltages) and multiple SiGe profiles.
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ISBN:9780780372399
0780372395
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1011588