A 0.1 GHz to 1.1 THz Inverted Grounded-CPW mTRL Calibration Kit Characterization in an InP HBT Process

• Published in: 2024 IEEE Wireless and Microwave Technology Conference (WAMICON) pp. 1 - 4
• Main Authors: Cheron, Jerome, Jones, Rob D., Williams, Dylan F., Urteaga, Miguel E., Bosworth, Bryan T., Jungwirth, Nicholas R., Jargon, Jeffrey A., Jamroz, Benjamin F., Long, Christian J., Orloff, Nathan D., Feldman, Ari D., Aaen, Peter H.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 15.04.2024
• Subjects: Calibration; grounded-coplanar waveguide line (G-CPW); Heterojunction bipolar transistors; multiline thru-reflect-line (mTRL); on-wafer calibration; Power transmission lines; S-parameters; Scattering parameters; Semiconductor device measurement; terahertz (THz) frequencies; Transmission line measurements; Wireless communication
• DOI: 10.1109/WAMICON60123.2024.10522868

We report a novel design approach of on-wafer multiline thru-reflect-line (mTRL) calibration kit fabricated on a commercial semiconductor-based transistor process that we validate from 0.1 GHz to 1.1 THz. The on-wafer calibration standards are designed with an innovative inverted grounded-coplanar waveguide (G-CPW) transmission line, where the calibration reference planes, buried under multiple layers of interconnects, provide direct access to the heterojunction-bipolar-transistor (HBT). We connect the different levels of ground-plane metallization with vias to avoid coupling with adjacent structures and limit the propagation of higher-order modes. We validate this approach with measurements of the complex characteristic impedance of the inverted G-CPW lines, the S-parameters of a 775 μm line, and a 600 GHz common-base amplifier.