SiGeSn/GeSn Multi Quantum Wells Light Emitting Diodes with a Negative Differential Resistance

This paper reports on the electrical and optical characterization of a SiGeSn/GeSn multi quantum wells light emitting diode. At low temperatures, the devices show a direct bandgap behavior of the luminescence and a resonant tunneling transport.

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Bibliographic Details
Published in2023 IEEE Silicon Photonics Conference (SiPhotonics) pp. 1 - 2
Main Authors Seidel, L., Liu, T., Marzban, B., Kiyek, V., Schulze, J., Capellini, G., Witzens, J., Buca, D., Oehme, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2023
Subjects
GeSn
Multi-Quantum-Well
Negative-Differential-Resistance
SiGeSn
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Summary:This paper reports on the electrical and optical characterization of a SiGeSn/GeSn multi quantum wells light emitting diode. At low temperatures, the devices show a direct bandgap behavior of the luminescence and a resonant tunneling transport.
ISSN:1949-209X
DOI:10.1109/SiPhotonics55903.2023.10141960