An Ultrafast Wavelength-swept REC-DFB Laser Based on the Instantaneous Injection Current

An ultrafast wavelength-swept distributed feedback (DFB) semiconductor laser based on the reconstruction-equivalent-chirp (REC) technique via instantaneous injection current modulation is demonstrated. The REC technique can simplify the DFB fabrication process and maintain good single-mode operation...

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Bibliographic Details
Published in2022 Asia Communications and Photonics Conference (ACP) pp. 1576 - 1578
Main Authors Li, Zhen, Dai, Pan, Meng, Lingxin, Chen, Zhuo, Xu, Kaichuan, Fan, Yaqiang, Dou, Rongrong, Wang, Feng, Chen, Xiangfei
Format Conference Proceeding
LanguageEnglish
Published IEEE 05.11.2022
Subjects
Broadband communication
DFB semiconductor laser
Distributed feedback devices
Fast wavelength-swept
Laser tuning
LD driving circuits
MOSFET circuits
Optoelectronic and photonic sensors
Reconstruction-equivalent-chirp technique
Sensor systems
Voltage
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Summary:An ultrafast wavelength-swept distributed feedback (DFB) semiconductor laser based on the reconstruction-equivalent-chirp (REC) technique via instantaneous injection current modulation is demonstrated. The REC technique can simplify the DFB fabrication process and maintain good single-mode operation. The driving circuit equipped with FPGA can generate a precise pulse current by controlling the n-metal-oxide-semiconductor field effect transistor (n-MOSFET). By changing the pulse voltage or pulse width of the laser injected current, a wide and fast wavelength-tuning can be realized. Specifically, we achieve a continuous wavelength-swept range of 9.27 nm within 5 μs. This method is of great significance for the future development of optical sensing systems.
DOI:10.1109/ACP55869.2022.10088934