Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS Technology

The Intel 4 CMOS FinFET technology delivers over 20% performance gains at iso-power over the prior generation (Intel 7). This paper reports reliability studies on the Intel 4 technology that demonstrate matched or better reliability while extending Moore's law in the areas of power, performance...

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Bibliographic Details
Published in2023 IEEE International Reliability Physics Symposium (IRPS) pp. 1 - 5
Main Authors Jamil, M., Mukhopadhay, S., Ghoneim, M., Shailos, A., Prasad, C., Meric, I., Ramey, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2023
Subjects
bias temperature instability
CMOS technology
FinFETs
High-k
hot carrier injection
Materials reliability
Measurement
Moore's Law
oxide breakdown
Performance gain
reliability
Semiconductor device modeling
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Summary:The Intel 4 CMOS FinFET technology delivers over 20% performance gains at iso-power over the prior generation (Intel 7). This paper reports reliability studies on the Intel 4 technology that demonstrate matched or better reliability while extending Moore's law in the areas of power, performance, and scaling over its predecessor. Industry-leading technology scaling comes with numerous challenges, including co-optimization of yield, performance, and reliability. This paper reports the development of Intel 4 technology with industry-standard reliability while delivering significant advancement in generational performance and density.
ISSN:1938-1891
DOI:10.1109/IRPS48203.2023.10117992