Analysis of the exponentially decaying transient current in MOS capacitors

• Published in: 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) pp. 387 - 392
• Main Authors: Yamada, R.-I., Yugami, J.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2002
• Subjects: Applied sciences; Compound structure devices; Current measurement; Degradation; Dielectric, amorphous and glass solid devices; Electronics; Energy states; Exact sciences and technology; Interfaces; MOS capacitors; MOSFETs; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Steady-state; Stress; Time measurement; Transient analysis; Voltage; Waveform; Oxide layer; Hole density; Experimental study; Exponential function; Energy level; MOS capacitor; Transients; Interface structure; Charge carrier trapping; Interface properties; Experimental result; Analysis method; Silicon oxides; Decay time; Silicon; Measurement method; Conduction band; Time constant; Electric current; Current density; Electrical characteristic
• ISBN: 0780373529; 9780780373525
• DOI: 10.1109/RELPHY.2002.996668

A long time constant transient current of a metal-oxide-semiconductor (MOS) capacitor during gate biasing has been widely studied to analyze the traps in the oxide layer. The time constant is of the order of a few seconds. In this study, we measured the short time constant (typically shorter that 1 s) transient current to analyze the traps located closer to the interface. We consequently found another type of transient current, which is caused by hole trapping at the Si/SiO/sub 2/ interface traps. The energy level of the interface traps is 0.2 eV from the bottom of Si conduction band.