Scaling Trends and Bias Dependence of SRAM SER from 16-nm to 3-nm FinFET

SRAM SER measurements show a decrease in per-bit susceptibility at the 3-nm FinFET node compared to the 5-nm FinFET node, contrary to the trend observed between the 7-nm and 5-nm FinFET nodes. Robust data across various supply voltages demonstrate a pronounced exponential bias influence on 3-nm FinF...

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Bibliographic Details
Published in2024 IEEE International Reliability Physics Symposium (IRPS) pp. 10C.2-1 - 10C.2-4
Main Authors Narasimham, B., Montoya, A. R., Paone, C., Riehle, T., Smith, M., Tsau, L., Ball, D., Bhuva, B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 14.04.2024
Subjects
alpha
bias dependence
Data models
FinFET
FinFETs
Fluctuations
neutron
Neutrons
Random access memory
scaling trends
SER
soft error
SRAM
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Summary:SRAM SER measurements show a decrease in per-bit susceptibility at the 3-nm FinFET node compared to the 5-nm FinFET node, contrary to the trend observed between the 7-nm and 5-nm FinFET nodes. Robust data across various supply voltages demonstrate a pronounced exponential bias influence on 3-nm FinFET SRAM SER, distinguishing it from earlier FinFET processes. Simulation and modeling attribute these trends to variations in Q_{crit} and Q_{coll} . These findings highlight that SER scaling trends in advanced FinFET processes do not necessarily align with the standard scaling trends observed in prior nodes.
ISSN:1938-1891
DOI:10.1109/IRPS48228.2024.10529467