Transient Effects of Band Non-Parabolicity in DGFETs for RF Applications

The atomistic investigation of modern nanoscale devices for RF applications requires time-resolved simulations, which often come with a high computational burden. Thus, the effective mass approximation is usually employed to reduce the complexity and computation times. Here, a novel approach combini...

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Bibliographic Details
Published in2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 253 - 256
Main Authors Pech, Mathias, Schulz, Dirk
Format Conference Proceeding
LanguageEnglish
Published The Japan Society of Applied Physics 27.09.2023
Subjects
Computational modeling
Computational Nanotechnology
DGFET
Distortion
Effective mass
Mathematical models
Mode Space
Nanoscale devices
Non-Parabolicity
Quantum Liouville
Quantum Transport
Radio frequency
Semiconductor process modeling
Tight-Binding
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Summary:The atomistic investigation of modern nanoscale devices for RF applications requires time-resolved simulations, which often come with a high computational burden. Thus, the effective mass approximation is usually employed to reduce the complexity and computation times. Here, a novel approach combining a tight-binding like ansatz with a Quantum Liouville-type Equation is presented, that can effectively take into account any arbitrary energy dispersion relation. It is applied to analyze the charge carrier transport in a DGFET in a single non-parabolic valley and compared to the parabolic case for the stationary and transient cases. As it is shown, the application of the parabolic approximation leads to a severe underestimation of the current densities and does not capture distortion effects when RF amplifier operation is considered.
DOI:10.23919/SISPAD57422.2023.10319483