Ultra low density and high performance InAs quantum dot single photon emitters

High quality InAs quantum dots with ultra-low density of 2×10 7 cm -2 have been developed on GaAs, demonstrating an almost ideal antibunching of g (2) (0) = 0.015 and short lifetimes of 212 ps and 113 ps for exciton and biexciton emission, respectively.

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Bibliographic Details
Published in2023 IEEE Photonics Conference (IPC) pp. 1 - 2
Main Authors Shang, C., De Gregorio, M., Buchinger, Q., Hoefling, S., Bowers, J. E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 12.11.2023
Subjects
Excitons
Gallium arsenide
integrated quantum photonic
Photonics
quantum dot
Quantum dots
single photon source
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Summary:High quality InAs quantum dots with ultra-low density of 2×10 7 cm -2 have been developed on GaAs, demonstrating an almost ideal antibunching of g (2) (0) = 0.015 and short lifetimes of 212 ps and 113 ps for exciton and biexciton emission, respectively.
ISSN:2575-274X
DOI:10.1109/IPC57732.2023.10360720