Junction temperature of 260 nm AlGaN UVC micro-LEDs under different irradiated Ta fluences

• Published in: 2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) pp. 312 - 314
• Main Authors: Zhao, Zhuoqun, Shan, Xinyi, Zhu, Shijie, Qian, Zeyuan, Cui, Xugao, Zhang, Shanduan, Wang, Lei, Tian, Pengfei
• Format: Conference Proceeding
• Language: English
• Published: IEEE 07.02.2023
• Subjects: Degradation; Ions; Light emitting diodes; Radiation effects; Temperature; Temperature measurement; Voltage measurement
• DOI: 10.1109/SSLChinaIFWS57942.2023.10071139

In this work, 260 nm UVC micro-LEDs with a size of 80 μm were fabricated and then were subject to two different fluences of heavy Ta ion irradiation. Junction temperatures of the fresh and irradiated micro-LEDs were tested by forward voltage method. At the ambient room temperature of 25.7℃, the fresh micro-LED and the irradiated micro-LEDs with fluences of 1×10 9 ions/cm 2 and 5×10 9 ions/cm 2 have junction temperatures of 53.4℃, 61.4℃ and 75.7℃ at a forward current of 25 mA, respectively. Degradation in I-V characteristics was observed with increasing the fluences of irradiation, thus generating higher junction temperature. The work helps to optimize thermal properties of UVC LEDs deployed in space scenarios.