Junction temperature of 260 nm AlGaN UVC micro-LEDs under different irradiated Ta fluences

In this work, 260 nm UVC micro-LEDs with a size of 80 μm were fabricated and then were subject to two different fluences of heavy Ta ion irradiation. Junction temperatures of the fresh and irradiated micro-LEDs were tested by forward voltage method. At the ambient room temperature of 25.7℃, the fres...

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Bibliographic Details
Published in2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) pp. 312 - 314
Main Authors Zhao, Zhuoqun, Shan, Xinyi, Zhu, Shijie, Qian, Zeyuan, Cui, Xugao, Zhang, Shanduan, Wang, Lei, Tian, Pengfei
Format Conference Proceeding
LanguageEnglish
Published IEEE 07.02.2023
Subjects
Degradation
Ions
Light emitting diodes
Radiation effects
Temperature
Temperature measurement
Voltage measurement
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Summary:In this work, 260 nm UVC micro-LEDs with a size of 80 μm were fabricated and then were subject to two different fluences of heavy Ta ion irradiation. Junction temperatures of the fresh and irradiated micro-LEDs were tested by forward voltage method. At the ambient room temperature of 25.7℃, the fresh micro-LED and the irradiated micro-LEDs with fluences of 1×10 9 ions/cm 2 and 5×10 9 ions/cm 2 have junction temperatures of 53.4℃, 61.4℃ and 75.7℃ at a forward current of 25 mA, respectively. Degradation in I-V characteristics was observed with increasing the fluences of irradiation, thus generating higher junction temperature. The work helps to optimize thermal properties of UVC LEDs deployed in space scenarios.
DOI:10.1109/SSLChinaIFWS57942.2023.10071139