A Testbed for Cryogenic On-wafer Noise Measurement Using Cold Source Method with Temperature-Dependent Loss Correction

On-wafer noise measurement at cryogenic temperature is challenging due to complexity of temperature gradient distributions in cryostats. As Keysight Technologies introduce their on-wafer cold source method for stable noise temperature measurement at room temperature, we propose our correct formulas...

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Bibliographic Details
Published in2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS) pp. 1 - 4
Main Authors Huang, Guo-Wei, Chen, Bo-Yuan, Shiao, Yu-Shao, Chuang, Chia-Wei, Shen, Liang-Chung, Chen, Kun-Ming, Chiu, Chia-Sung
Format Conference Proceeding
LanguageEnglish
Published IEEE 15.04.2024
Subjects
cold source method
cryogenic CMOS
cryogenic InP pHEMT
cryogenic noise temperature measurement
Cryogenics
Loss measurement
Noise
Noise measurement
PHEMTs
Superconducting cables
Temperature distribution
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Summary:On-wafer noise measurement at cryogenic temperature is challenging due to complexity of temperature gradient distributions in cryostats. As Keysight Technologies introduce their on-wafer cold source method for stable noise temperature measurement at room temperature, we propose our correct formulas as loss correction to exploit the method to work properly for cryogenic noise temperature measurement, especially as a good fit for those which involve a large number of samples, e.g., Known-Good-Die testing. In this paper, we demonstrate the feasibility of the correction with 16nm, 65nm CMOS, and two InP pHEMT transistors at 4-14GHz. The correction significantly compensates the underestimated noise temperatures by more than 20K. As the results, we suggest that the correction is convenient and more accurate while using the cold source method for cryogenic on-wafer noise temperature measurement.
ISSN:2158-1029
DOI:10.1109/ICMTS59902.2024.10520691