Critical fields and spin polarized tunneling measurements of very thin V3Ga films

• Published in: IEEE transactions on magnetics Vol. 23; no. 2; pp. 948 - 951
• Main Authors: Tkaczyk, J., Tedrow, P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.03.1987; Institute of Electrical and Electronics Engineers
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Extraterrestrial measurements; Magnetic field measurement; Magnetic materials; Materials science; Metals, alloys and compounds (a15, 001c15, laves phases, chevrel phases, borocarbides, etc.); Metals, semimetals and alloys; Paramagnetic materials; Physics; Polarization; Scattering; Specific materials; Superconducting films and low-dimensional structures; Superconducting materials (excluding high-tc compounds); Superconductivity; Temperature; Thickness measurement; Transistors; Tunneling; Tunnel effect; Superconductivity; Spin polarization; Critical field; Experimental study; Layer thickness; Thin film; Thickness; Spin orbit interaction; Transition metal Alloys; Tunneling; Binary alloy; Low temperature
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/TMAG.1987.1064906

The critical fields of V 3 Ga thin films have been measured with the field applied both perpendicular and parallel to the film surface. A transition from three to two dimensional behavior is noted as a function of thickness. Spin polarized tunneling measurements are presented for junctions fabricated with Al 2 O 3 barriers and Fe counter electrodes onto 10 nm thick films of V 3 Ga. Unexpectedly low values for the spin-orbit scattering rate and effective g-factor are inferred from the tunneling measurements. This result is consistent with critical field measurements.