Solutions To Improve HBM ESD Robustness of GaN RF HEMTs

Gallium Nitride (GaN) high electron mobility transistors (HEMT) exhibit 3 different types of HBM failures, namely, reverse Schottky electric field (REF) failure, 2DEG channel constant power (CP) failure and forward Schottky current crowding (CC) failure. HBM robustness of each failure can be improve...

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Bibliographic Details
Published in2023 45th Annual EOS/ESD Symposium (EOS/ESD) Vol. EOS-45; pp. 1 - 6
Main Authors Sandupatla, Abhinay, Chen, Shih-Hung, Mane, Nikhil, Parvais, Bertrand, Yu, Hao, Pradhan, Nilam, Collaert, Nadine
Format Conference Proceeding
LanguageEnglish
Published EOS/ESD Association, Inc 02.10.2023
Subjects
Electrostatic discharges
Failure analysis
HEMTs
Logic gates
Proximity effects
Radio frequency
Robustness
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DOI10.23919/EOS/ESD58195.2023.10287752

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Summary:Gallium Nitride (GaN) high electron mobility transistors (HEMT) exhibit 3 different types of HBM failures, namely, reverse Schottky electric field (REF) failure, 2DEG channel constant power (CP) failure and forward Schottky current crowding (CC) failure. HBM robustness of each failure can be improved by ~75% to ~200% by increasing the gate-ohmic spacing or by increasing device width. Increasing field plate length increases HBM robustness against REF by ~50%. Similarly using a back barrier helps increase HBM robustness against CP failure by ~60%.
DOI:10.23919/EOS/ESD58195.2023.10287752